| PART |
Description |
Maker |
| HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDS |
600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBTs
600 V, SMPS N-Channel IGBT
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S12N60A4DS HGTP12N60A4D HGTG12N60A4D FN4697 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HGTG20N60A4D09 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Fairchild Semiconductor
|
| HGTG30N60B3D HGT4E30N60B3DS |
60A/ 600V/ UFS Series N-Channel IGBT
60A 600V UFS Series N-Channel IGBT
60A, 600V, UFS Series N-Channel IGBT
2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN
CONNECTOR ACCESSORY 60 A, 600 V, N-CHANNEL IGBT, TO-268AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FQU5N60C FQD5N60C FQD5N60CTM FQD5N60CTF FQU5N60CTU |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP5N60C FQPF5N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
