| PART |
Description |
Maker |
| SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| DSS60600MZ4 DSS60600MZ4-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
6 A, 60 V, PNP, Si, POWER TRANSISTOR GREEN, PLASTIC PACKAGE-4
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| IRGBC30UD2 |
600V Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| 2N3767SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
Seme LAB
|
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
| BFR340T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Noise Amplifiers and Oscillators
|
INFINEON[Infineon Technologies AG]
|
| IRG4BH20K-S |
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4PC60F |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators
|
INFINEON[Infineon Technologies AG]
|
