| PART |
Description |
Maker |
| GS8170DD36C-250I GS8170DD36C GS8170DD36C-200 GS817 |
18Mb Common I/O DDR SigmaRAMs
18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
|
GSI Technology
|
| GS816273C-250 GS816273C-250I GS816273C-225 GS81627 |
18Mb Burst SRAMs
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM
From old datasheet system
(MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets]
OKI electronic components
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solu...
|
| OM100Q05CB OM100Q80XX OM100Q05DB OM100Q05RB OM100Q |
50 A, SILICON, RECTIFIER DIODE
600V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
300V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
700V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
500V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
400V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
200V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
150V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
800V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK PACKAGE
|
International Rectifier
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
http://
|
| GS816218 GS816236 GS816272 |
18Mb Burst SRAMs
|
GSI Technology
|
| GS816136B |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8161ZV18B GS8161ZV32B GS8161ZV36B |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8161V18B |
18Mb Burst SRAMs
|
GSI Technology
|
