| PART |
Description |
Maker |
| FU-17SLD-F3M1 |
FC-CONNECTORIZED MODULE FC -连接器的模块
FC-CONNECTORIZED MODULE
|
Roithner LaserTechnik G...
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric Sem...
|
| PDT0411 PDT0411-FC-A PDT0411-ST-F PDT0412 PDT0412- |
Connectorized PIN Photodiodes
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| TRR-8A33 |
Connectorized High-speed GaAs PIN
|
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
|
| ZX60-8008E-S ZX60-8008E-S_ ZX60-8008E ZX60-8008E_ |
Connectorized Amplifier 50 Ohm, 20 MHz to 8 GHz
|
MINI[Mini-Circuits]
|
| ZX60-3018G |
Connectorized Amplifier 50ohm, 20 MHz to 3 GHz
|
MINI[Mini-Circuits]
|
| 6069 |
SINGLE POLE, SIX THROW CONNECTORIZED SWITCHES
|
Micronetics, Inc.
|
| LST0400 |
Connectorized Single Mode ELEDS(连通的单模式ELED)
|
Agilent(Hewlett-Packard)
|
| 6055 6056 |
SINGLE POLE, THREE THROW CONNECTORIZED SWITCHES
|
Micronetics, Inc.
|
| HMPS1000MT-HU HMPS5220MT-LT |
Connectorized fixed frequency Synthesizer with Crystal Oscillator
|
BOWEI Integrated Circui...
|
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| X558-5999-Z6-F X5585999Z6-F S5585999Z6-F |
10/100BT MAGNETICS MODULE
10/100BASE-T MODULE
10/100BTBASE-T MODULE
|
Bel Fuse Inc.
|
| HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
