| PART |
Description |
Maker |
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 F |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| JANSR2N7407 FN4636 |
Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSYE923A0R4 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 F |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSJ163R FSJ163D1 FSJ163R1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil Corporation
|
| FSL923A0R3 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A |
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 5 A, 200 V, 0.67 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSJ055R4 FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPL234F FSPL234R FN4881 FSPL234R4 |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐射N沟道MOS场效应管)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
From old datasheet system
|
Intersil Corporation
|
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
