| PART |
Description |
Maker |
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FS70UMJ-06 |
Power MOSFETs: FS Series, Low Voltage, 60V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| FY12AAJ-03F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
| FL7KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| 2SK1861 |
Power MOSFETs / VR Series
|
Shindengen
|
| 2SK1195 |
Power MOSFETs / VR Series
|
Shindengen
|
| FY5ACH-03A |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
| FS14KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS3KM-10A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FY3ACJ-03F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
