| PART |
Description |
Maker |
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| LP3000 |
2 W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD2250-000S3 FPD2250-000SQ FPD2250 FPD2250-000 |
1.5W POWER pHEMT
|
RF Micro Devices
|
| LP6872 |
0.5W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| HMC949 |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
|
Hittite Microwave Corporation
|
| FPD2000AS |
2W PACKAGED POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FP4050 |
2-WATT POWER PHEMT
|
Filtronic Compound Semicond...
Filtronic Compound Semiconductors
|
| FPD1050 |
0.75W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
