| PART |
Description |
Maker |
| EGN030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN21A180IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| IP2010PBF |
High Frequency GaN-Based Integrated Power Stage
|
International Rectifier
|
| MGF0846G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| CLE545W |
High Power GaN Green LED Flat Window Hermetic Coaxial Package
|
Clairex Technologies, Inc
ETC[ETC]
|
| KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC2616 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| BFN22 Q62702-F1024 Q62702-F102 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
