| PART |
Description |
Maker |
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| QPC1006EVB |
0.15 ?2.8 GHz High Power GaN SP3T Switch
|
TriQuint Semiconductor
|
| CLE539 |
High Power GaN White LED Dome Lens Can, Hermetically Sealed
|
ETC[ETC]
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| CLE549W |
High Power GaN White LED Flat Window Hermetic Coaxial Package
|
Clairex Technologies, Inc
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| MAX900 MAX900ACPP MAX900ACWP MAX900AEPP MAX900AEWP |
High-Speed, Low-Power Voltage Comparators
High-Speed Low-Power Voltage Comparators
High-Speed / Low-Power Voltage Comparators
Octal Bus Transceivers With 3-State Outputs 20-LCCC -55 to 125
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| BFN21 Q62702-F1059 |
From old datasheet system
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
| 2SA1871 2SA1871-GA1-AZ |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 进步党三重扩散硅晶体管高速高压开
1 A, 600 V, PNP, Si, POWER TRANSISTOR
High-speed high-voltage switching PNP 3-diffusion trans
|
NEC, Corp.
NXP Semiconductors N.V.
NEC[NEC]
|
