| PART |
Description |
Maker |
| MA4EX950L-1225 MA4EX950L-1225T NJG1557KB2-L8 NJG15 |
Low Cost Silicon Double Balanced HMIC Mixer, 700 - 1200 MHz
低成本硅双平衡HMIC搅拌机，700 - 1200兆赫
Low Cost Silicon Double Balanced HMICMixer, 700 - 1200 MHz 低成本硅HMIC⑩双平衡混频器，700 - 1200兆赫
|
MACOM[Tyco Electronics]
Microsemi, Corp.
|
| MA4EX950M-1225T |
HMICTM硅双平衡混频器，700 - 1200兆赫
Silicon Double Balanced HMICTM Mixer, 700 - 1200 MHz
|
MACOM[Tyco Electronics]
|
| 1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| ADL5812-EVALZ ADL5812ACPZ-R7 |
Dual High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
Dual High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
|
Analog Devices
|
| 100C1032-TNC 100C1032 100C1032-BNC 100C1032-SMA |
Medium Power PIN Diode SP2T 100 MHz - 1400 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.5 dB INSERTION LOSS
DAICO Switches SPST, SP2T
|
DAICO INDUSTRIES INC
DAICO[DAICO Industries, Inc.]
|
| ADL5812 |
Dual High IP3, 700 MHz TO 2800 MHz, Double Balanced, Passive Mixer, IF Amp, and Wideband LO Amp
|
Analog Devices
|
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1.4KESD48A 1.4KESD48AE3 1.4KESD48E3 1.4KESD43A 1.4 |
AXIAL-LEAD TVS
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 110; VC (V): 243; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 24.7; ID (µA): 1; Tol (%): 5;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 21.1; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 120; VC (V): 267; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 12; VC (V): 28; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 110; VC (V): 213; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 11; VC (V): 27.1; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10; 1400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
Microsemi Corporation
|
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
|
