| PART |
Description |
Maker |
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6306 |
SiC Schottky Barrier Diode Bare Die
|
Rohm Co., Ltd.
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6304 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| S4101 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6201 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| APT2X21DC60J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| MGF1951A-01 MGF1951A 1951A |
Medium Power Microwave MESFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
| AFM06P2-212 |
Ka Band Power GaAs MESFET
|
Skyworks Solutions Inc.
|
| NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
|
