| PART |
Description |
Maker |
| STM51004A STM51004G STM51004X STM51005A STM51005G |
1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包，中功
(STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power
1300 nm Laser in Receptacle Package,Medium Power
1300 nm Laser in Receptacle Package Medium Power
From old datasheet system
1300 nm Laser, Medium Power
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 74HC04D 74HC04PW-T 74HCT04 74HC04DB 74HCT04BQ 74HC |
Hex inverter - Description: Hex Inverter ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: /- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 7@5V ns; Voltage: 2.0-6.0 V
|
NXP Semiconductors N.V.
|
| 3G3MV-A2022 3G3MV-A2002 3G3MV-A2004 3G3MV-A2015 3G |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
INVERTER 3 PHASE 2.2KW 415VAC
INVERTER 1 PHASE 0.25KW
INVERTER 1 PHASE 2.2KW
INVERTER 3 PHASE 3KW 415VAC
INVERTER 3 PHASE 4KW 415VAC
逆变器一.1KW
逆变器单.5千瓦
|
复位半导
|
| 74AHCT04D-T |
Hex inverter - Description: Hex Inverter; TTL Enabled ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: /- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3 ns; Voltage: 4.5-5.5 V
|
NXP SEMICONDUCTORS
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| BC737 BC738 |
PNP SILICON AF MEDIUM POWER TRANSISTORS
(BC737 / BC738) NPN SILICON AF MEDIUM POWER TRANSISTORS
|
Micro Electronics
|
| BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏，1安PNP型中等功率晶体管
Si, POWER TRANSISTOR
45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
| AT-42000 AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power GHz中等功率高达6 GHz的中等功
|
HIROSE ELECTRIC Co., Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| FGR3000FX-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| FG3000DV-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
