| PART |
Description |
Maker |
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| TGA2505 |
13 - 17 GHz 2.5 Watt, 25dB Power Amplifier 13000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
13 17 GHz 2.5 Watt, 25dB Power Amplifier
|
TriQuint Semiconductor, Inc.
|
| MA1046-1 |
CABLE SMA PLUG-PLUG HF-.141 4,1
For GHz - Power Amplifier
For 1.9 GHz - Power Amplifier
From old datasheet system
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RMPA61810 |
6-18 GHz 1W Power Amp
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
|
FAIRCHILD[Fairchild Semiconductor]
|
| SE2522L SE2522L-EK1 SE2522L-R |
RangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information
RANGECHARGER⒙ 2.4 GHZ POWER AMPLIFIER AND POWER DETECTOR IC PRELIMINARY INFORMATION
RangeCharger2.4 GHz Power Amplifier And Power Detector IC Preliminary Information
|
SiGe Semiconductor Inc.
SiGe Semiconductor, Inc.
|
| INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏，高隔离硅射频放大器（直流.5 GHz3伏，高隔离硅射频集成电路放大器）
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
| AA026P2-00 |
GT 35C 35#16 SKT PLUG
23.5-26.5 GHz GaAs MMIC Power Amplifier
23.526.5 GHz GaAs MMIC Power Amplifier
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| AWB7123HM41P8 |
1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| SST13LP02 SST13LP02-QDF-K SST13LP02-QDF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| TPT-18-6037 TPT-18-6027 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-18-6036 CPT-18-6025 CPT-18-6026 CPT-18-6035 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
