| PART |
Description |
Maker |
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
| CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
| CM100DUS-12F |
Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts
|
Powerex Power Semicondu...
|
| CM600HU-24F |
Trench Gate Design Single IGBTMOD?/a> 600 Amperes/1200 Volts Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整 85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Won-Top Electronics Co., Ltd. WTE[Won-Top Electronics]
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|