| PART |
Description |
Maker |
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 200 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
|
| CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HDD60-48T512X HDD50-12D05P HDD50-12D05T HDD50-12D0 |
75W 960MHZ 26V NI780L 的DC - DC转换器的5060
3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN DC - DC转换器的5060
1000000 SYSTEM GATE 1.2 VOLT FPGA DC - DC转换器的5060
DC-DC CONVERTER 50~60W DC - DC转换器的5060
XC2VP7-6FFG672C DC - DC转换器的5060
2000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 的DC - DC转换器的5060
DC-DC CONVERTER 50~60W 的DC - DC转换器的5060
6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
4500 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:3.5W; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):300; Collector Current:400mA; Package/Case:TO-39
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| FS75R07N2E4 FS75R07N2E4-13 |
Dual channel IGBT gate driver
EconoPACK2 Modul mit Trench
|
Infineon Technologies AG
Infineon Technologies A...
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
