| PART |
Description |
Maker |
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SC3307 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| 2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC2790 |
SILICON NPN TRIPLE DIFFUSED TYPE
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION
|
Toshiba Semiconductor
|
| 2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，大电流开关，斩波调压器，DC - DC变换器和电机驱动应用
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| 2SC5465 |
Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications
|
TOSHIBA
|
| 2SC2792 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| H5N5016PL |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
