| PART |
Description |
Maker |
| CG6263AM |
2Mb (128K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| WCMC2016V1X-2XWI |
128K x 16 Pseudo Static RAM DIE
|
Weida Semiconductor, In...
|
| LH5P8128 |
CMOS 1M (128K x 8) Pseudo-Static RAM
|
Sharp Electrionic Components
|
| LH5P8129 LH5P8129N-60 |
CMOS 1M(128K x 8)CS-control pseudo-static RAM
CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM
|
SHARP[Sharp Electrionic Components]
|
| LH5P8128N-60L LH5P8128N-80L |
128K X 8 PSEUDO STATIC RAM, 60 ns, PDSO32 0.525 INCH, PLASTIC, SOP-32
128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32 0.525 INCH, PLASTIC, SOP-32
|
Sharp Electronics, Corp.
|
| W964B6BBN70 W964B6BBN80E |
1M WORD X 16BIT LOW POWER PSEUDO SRAM 1M X 16 PSEUDO STATIC RAM, 65 ns, PBGA48
|
Winbond Electronics, Corp.
WINBOND ELECTRONICS CORP
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W963A6BBN80E |
512K WORD X 16 BIT LOW POWER PSEUDO SRAM 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
|
Winbond Electronics, Corp.
|
| HY64UD16162B-DF70I |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
Hynix Semiconductor, Inc.
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
