| PART |
Description |
Maker |
| C8051F126 |
50 MIPS, 128 kB Flash, 10-Bit ADC, 100-Pin Mixed-Signal MCU
|
SILABS[Silicon Laboratories]
|
| ATTINY2313 ATTINY2313-24SJ |
8-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PDSO20 0.300 INCH, LEAD FREE, PLASTIC, MS-013AC, SOIC-20
2K Bytes of In-System Self-Programmable Flash, 128 Bytes In-System Programmable EEPROM, 128 Bytes Internal SRAM. USI--Universal Serial Interface, Full Duplex UART. debugWIRE for on-chip-debug. Up to 16 MIPS throughput at 16 MHz.
|
Atmel, Corp.
|
| AT90S2313 |
2-Kbyte In-System programmable Flash Program Memory, 160 byte SRAM, 128 Byte EEPROM, Up to 10 MIPS throughput at 10 Mhz.
8-bit Microcontroller with 2K Bytes of In-System
Programmable Flash
|
ATMEL
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| C8051F015 C8051F015-GQ |
8-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP64
25 MIPS, 32 kB Flash, 10-Bit ADC, 64-Pin Mixed-Signal MCU
|
Silicon Laboratories
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
| AM29LV128MH93RFI |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Advanced Micro Devices, Inc.
|
| C8051F311 C8051F311-GM |
25 MIPS, 16 KB FLASH, 10-BIT ADC, 28-PIN MIXED-SIGNAL MCU
|
Silicon Laboratories
|
| C8051F351 C8051F351-GM |
50 MIPS, 8 KB FLASH, 24-BIT ADC, 28-PIN MIXED-SIGNAL MCU
|
Silicon Laboratories
|
| C8051F000 |
20 MIPS, 32 kB Flash, 12-Bit ADC, 64-Pin Mixed-Signal MCU
|
Silicon Laboratories
|
| C8051F001 |
20 MIPS, 32 kB Flash, 12-Bit ADC, 48-Pin Mixed-Signal MCU
|
Silicon Laboratories
|
| C8051F063 |
25 MIPS, 64 kB Flash, 16-Bit ADC, 64-Pin Mixed-Signal MCU
|
SILABS[Silicon Laboratories]
|
|
