| PART |
Description |
Maker |
| BSO613SPV |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SO-8, RDSon = 0.13
|
Infineon Technologies AG
|
| BSP171P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
| BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
| SN7002N |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - SOT23, 60V, 5ohm, 0.2A
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSP296 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.8 Ohm, 1.0A, LL
|
Infineon
|
| BSO4410 |
Low Voltage MOSFETs - OptiMOS Small Signal MOSFET, 30V, SO-8, RDSon = 13mOhm, 11A, LL
|
Infineon
|
| BSL211SP BSL211 |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, TSOP-6
OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSD223P |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
OptiMOS -P Small-Signal-Transistor
CHOKE RF COATED 1.8UH 10%
|
Infineon Technologies A...
Infineon Technologies AG
Philips Semiconductors
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| MGSF3441XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
ON Semiconductor
|
