| PART |
Description |
Maker |
| Q62702-F1611 BFP81 |
NPN Silicon RF Transistor for low noi...
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-F543 BFR14C |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
|
| BFR92P Q62702-F1050 BFR92PQ62702-F1050 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管（对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关）
TRANSISTOR UHF BIPOLAR BREITBAND
From old datasheet system
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFG193 Q62702-F1291 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
SIEMENS[Siemens Semiconductor Group]
http://
|
| FZT491 FZT491A |
NPN Low Sat Transistor
NPN Med Power Transistor
SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Style:Wall Mount Receptacle; Insert Arrangement:18-11
|
Zetex Semiconductors
Diodes Incorporated
|
| T1P3005028-SP |
50 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
|
TriQuint Semiconductor
|
| 2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
(2N6130 - 2N6134) NPN SILICON TRANSISTOR
Leaded Power Transistor General Purpose
Leaded Power Transistor Darlington
|
http://
ON Semiconductor
Central Semiconductor Corp.
Advanced Semiconductor
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| 2N6676 JANTX2N6693 JAN2N6676 JAN2N6678 JAN2N6691 J |
NPN Transistor
From old datasheet system
NPN POWER SILICON TRANSISTOR 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61
|
MICROSEMI[Microsemi Corporation]
http://
Microsemi, Corp.
|
| 2SD1060L-X-AB3-R 2SD1060L-X-T60-K 2SD1060L-X-T92-B |
NPN PLANAR SILICON TRANSISTOR
5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-252
5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
UNISONIC TECHNOLOGIES CO LTD
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| BFT92 Q62702-F1062 BFT92Q62702-F1062 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
|
