| PART |
Description |
Maker |
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF0810-90 BLF0810S-90 |
Base station LDMOS transistors
|
NXP Semiconductors
Philips Semiconductors
|
| BLF0810-180 BLF0810S-180 |
Base station LDMOS transistors
|
NXP Semiconductors
Philips Semiconductors
|
| BLF0810S-180 BLF0810-180 BLF0810-180_S_N_4 |
Base station LDMOS transistors
From old datasheet system
|
Philips
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 820-IF70.0M-U |
Base Station & Repeater
|
Oscilent Corporation
|
| 820-IF77.5M-A |
Base Station & Repeater
|
Oscilent Corporation
|
| 820-IF221.288M-A |
Base Station & Repeater
|
Oscilent Corporation
|
| 835-IF240.0M-C |
Base Station & Repeater
|
Oscilent Corporation
|
| 827-IF120.0M-A |
Base Station & Repeater
|
Oscilent Corporation
|
