| PART |
Description |
Maker |
| BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF120210 BF1202.215 |
N-channel dual-gate PoLo MOS-FETs
N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors
|
| 3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
| BF1100R BF1100 BF1100_1 BF1100-15 BF1100-2015 |
Dual-gate MOS-FETs
From old datasheet system
|
Quanzhou Jinmei Electro...
Philips
|
| BF1101WR BF1101R BF1101 BF1101-2015 BF1101-15 |
N-channel dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF908 BF908-R-2015 BF908-R-15 |
Dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
|
| IXTZXXNXX IXTHXXNXX |
(IXTMxxxx) MOS FETs
(IXTHxxxx) MOS FETs
|
IXYS
|
| 2SK0615 2SK615 |
SILICON N-CHANNEL MOS FET
From old datasheet system
Small-signal device - Small-signal FETs - MOS FETs
|
http://
Panasonic
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| VND670SP |
DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION
|
STMicroelectronics
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
