| PART |
Description |
Maker |
| STV8237 STV8237T |
Digital Audio Decoder/Processor for A2 and NICAM Television/Video Recorders
|
STMicroelectronics
|
| MC1378FN MC1378P MC1378_D ON0833 |
ACF-II Evaluation Board Operating Manual
From old datasheet system
COLOR TELEVISION COMPOSITE VIDEO OVERLAY SYNCHRONIZER
|
Motorola, Inc.
ON Semi
|
| BF180 BF173 BF195D |
(BF1xx) TV / Video Devices
|
Semiconductors
|
| STV6434S STV6434 STV6434D STV6434ST |
Filtered Video Buffers for STB and DVD Devices
|
ST Microelectronics
STMicroelectronics
|
| STV6435 STV6435D STV6435S STV6435ST |
Filtered Video Buffers for STB and DVD Devices
|
ST Microelectronics
STMicroelectronics
|
| STV6432 |
Audio/Video Output Buffers for STB and DVD Devices
|
STMICROELECTRONICS[STMicroelectronics]
|
| C67078-S1312-A2 BUZ60 BUZ60C67078-S1312-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管（N通道增强模式雪崩级）
FILTERED VIDEO BUFFERS FOR STB AND DVD DEVICES
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
