| PART |
Description |
Maker |
| CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| CMLD2004 CMLD2004S CMLD2004A CMLD2004C CMLD2004DO |
SMD Switching Diode Dual: Common Cathode
SMD Switching Diode Dual: Opposing Polarity
SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| BAS21HT1G |
High Voltage Switching Diode 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
| CPD80 |
Switch Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| MMBD3004S MMBD3004S-7 MMBD3004 MMBD3004S- |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc.
DIODES[Diodes Incorporated]
http://
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
