| PART |
Description |
Maker |
| 5KP45APT |
VOLTAGE-5.0 TO 110 VOLTS 5000 WATTS PEAK POWER 8.0 WATTS STEADY STATE
|
Chenmko Enterprise Co. Ltd.
|
| RFP-400-100R RFP-800-100R |
Flanged Resistors 400 Watts, 100ohm
Flanged Resistors 400 Watts, 100 ohm
|
Anaren Microwave
|
| PTB20078 |
2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦，16250年国际海事卫星组织兆赫射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20038 |
25 Watts, 86000 MHz Cellular Radio RF Power Transistor
25 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| G150N50W4A |
Flange Mount Termination 150 Watts, 50楼?
Flange Mount Termination 150 Watts, 50Ω
|
Anaren Microwave
|
| PTB20077 |
0.7 Watts, 1525660 MHz INMARSAT RF Power Transistor
0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor
0.7 Watts 1525-1660 MHz INMARSAT RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦，1.78-1.92 GHz射频功率晶体
5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
