| PART |
Description |
Maker |
| SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| IXGR32N170H1 |
38 A, 1700 V, N-CHANNEL IGBT, TO-247AD PLASTIC, ISOPLUS247, 3 PIN
|
IXYS, Corp.
|
| CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| CM450DX-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM600DXL-34SA |
Dual IGBT NX-Series Module 600 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM200EXS-34SA |
Chopper IGBT NX-Series Module 200 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
| HGTP14N40F3VL HGT1S14N40F3VLS |
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
330mJ, 400V, N-Channel Ignition IGBT
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 38 A, 420 V, N-CHANNEL IGBT, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| 3296-1700 |
KR Electronics part number 3296-1700 is a 1700 MHz highpass filter
|
KR Electronics, Inc.
|
