| PART |
Description |
Maker |
| APT2X60D30J APT2X61D30J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 300V 60A
|
Advanced Power Technology
|
| APT2X61D60J APT2X60D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 60A
|
ADPOW[Advanced Power Technology]
|
| APT2X61D20J APT2X60D20J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 60A
|
Advanced Power Technology
|
| APT2X100S20J APT2X101S20J |
HIGH VOLTAGE SCHOTTKY DIODES 高压肖特基二极管
CONNECTOR ACCESSORY 高压肖特基二极管
DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES 200V 100A
|
Microsemi, Corp.
Advanced Power Technology, Ltd.
|
| STE150N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
|
STMicroelectronics
|
| STE250N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE -通道增强型功率MOS器件中的ISOTOP封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| APT100GT120JRDQ4 |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60;
|
MICROSEMI POWER PRODUCTS GROUP
|
| APT77N60JC3 |
Power MOSFET; Package: ISOTOP®; ID (A): 77; RDS(on) (Ohms): 0.035; BVDSS (V): 600;
Super Junction MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| STE38NB50 5564 |
N-Channel 500V-0.11Ω-38A- ISOTOP PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.11Ω- 38A条，1000V的集电极PowerMESHTM MOSFET的（不适用沟道MOSFET的）
N - CHANNEL PowerMESH MOSFET
N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| DPLS160-7 |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
Epitaxial Planar Die Construction
|
Diodes, Inc.
Diodes Incorporated
|
| SOT545-3 |
plastic thermal enganced thin quad flat package; 48 leads; body 7 x 7 x 1 mm; exposed die pad
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
