| PART |
Description |
Maker |
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| APT20M22B2VFR |
POWER MOS V 200V 100A 0.022 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M22JVR APT20M22 |
From old datasheet system
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M22JVFR |
Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 16x25 mm; Packaging: Bulk
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M42HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 50A 0.042 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M34BFLL APT20M34SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功MOSFET的新一代
POWER MOS 7 200V 74A 0.034 Ohm
|
Advanced Power Technology, Ltd.
|
| APT20M34BLL APT20M34SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 200V 74A 0.034 Ohm
|
Advanced Power Technology, Ltd.
|
| APT100S20B |
HIGH VOLTAGE SCHOTTKY DIODE 200V 100A
|
Advanced Power Technology
|
| APT100S20LCT |
HIGH VOLTAGE SCHOTTKY DIODES 200V 100A
|
Advanced Power Technology
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M10JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 185A 0.010 Ohm
|
Advanced Power Technology Ltd.
|
