| PART |
Description |
Maker |
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| NP40N055KLE NP40N055KLE-E1-AY NP40N055KLE-E2-AY NP |
40 A, 55 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC Corp.
|
| 2SK2487 2SK2487-A |
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SPU03N60S5 |
Cool MOS Power-Transistor(Cool MOS 功率晶体 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| APT5014SLL APT5014BLL APT5014BLL_04 APT5014BLL04 |
35 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS 7 MOSFET
|
ADPOW[Advanced Power Technology]
|
| APT20M45BVFR |
56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement
POWER MOS V 200V 56A 0.045 Ohm
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| 2SK4178-ZK-E2-AY 2SK4178-ZK-E1-AY 2SK4178-S27-AY 2 |
48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开关N沟道功率场效应晶体管
|
NEC Corp.
NEC, Corp.
|
| IRF530 IRF532FI IRF531FI IRF533FI IRF531 IRF530FI |
N-channel MOSFET, 80V, 9A
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
|
