| PART |
Description |
Maker |
| IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
| STN2N10L 4585 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管 From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMicroelectronics N.V. ST Microelectronics
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
| STP2N60FI STP2N60 3137 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
| STB60N03L-10 4892 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PC 3C 38#16 PIN RECP N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
|
| MTP3N60FI MTP3N60 3037 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
|
意法半导 STMicroelectronics Motorola, Inc
|
| MTP6N60 3038 -MTP6N60 |
N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
| IRF520 IRF520FI 3002 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
| STT3434 |
N-Channel Enhancement Mode Mos.FET N-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| STH10NA50 STH10NA50FI STW10NA50 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N-CHANNEL Power MOS MOSFET
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
| APT6010LLL APT6010B2LL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 54A 0.100 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|