| PART |
Description |
Maker |
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STP5NB40 STP5NB40FP 5321 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STB11NB40 5418 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的（不适用沟道增强模式MOSFET的）
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STP9NB50FP STP9NB50 5368 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的（不适用沟道增强模式MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
STMicroelectronics N.V.
意法半导
|
| IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STP7NB60FP STP7NB60 5325 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET -通道增强型MOSFET的PowerMESH
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
ST Microelectronics
STMicroelectronics
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MGSF3455XT1 MGSF3455XT1_D ON1912 ON1911 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
P-CHANNEL ENHANCEMENT?ODE
From old datasheet system
|
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| APM9988COC-TUL APM9988COC-TRL |
Dual N-Channel Enhancement Mode MOSFET 双N沟道增强型MOS
Dual N-Channel Enhancement Mode MOSFET 6 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA
|
Anpec Electronics, Corp.
|
| APM9968C APM9968COC-TR |
20 V, N-channel enhancement mode MOSFET
N-Channel Enhancement Mode MOSFET N沟道增强型MOS
From old datasheet system
|
Anpec Electronics, Corp.
ANPEC[Anpec Electronics Coropration]
ANPEC Electronics Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
