| PART |
Description |
Maker |
| IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Power MOSFET(Vdss=20V/ Id=12A)
Power MOSFET(Vdss=20V, Id=12A)
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| STT5NF20V |
N-CHANNEL 20V - 0.030 ohm - 5A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET
N-CHANNEL 20V 0.030 OHM 5A SOT23-6L 2.7-DRIVE STRIPFET II POWER MOSFET
N-CHANNEL 20V - 0.030 ohm - 5A SOT23-6L 2.7V-DRIVE STripFETII POWER MOSFET N沟道20V 0.030欧姆- 5A条采用SOT23 - 6L 2.7 -驱动STripFET⑩二功率MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
|
| FDS9934C FDS9934CNL |
Dual N- and P-Channel enhancement mode power field effect transistors 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
20V Complementary PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRF7401 IRF7402 IRF7401TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
|
IRF[International Rectifier]
|
| IRF7311TR IRF7311TRPBF |
Generation V Technology
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
International Rectifier
|
| FDS6911 |
Fast switching speed, Low gate charge
Dual N-Channel Logic Level PowerTrench? MOSFET 20V, 7.5A, 13mΩ
Dual N-Channel Logic Level PowerTrench㈢ MOSFET 20V, 7.5A, 13mヘ
Dual N-Channel Logic Level PowerTrench??MOSFET 20V, 7.5A, 13m??/td>
| SOP
|
List of Unclassifed Manufacturers
FAIRCHILD[Fairchild Semiconductor]
|
| IRL3714Z IRL3714ZL IRL3714ZS |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
IR
|
| IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 12A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF7F3704 |
HEXFET? POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
|
IRF[International Rectifier]
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| WNM2023-3TR WNM2023 |
N-Channel MOSFET
Single N-Channel, 20V, 3.2A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
