| PART |
Description |
Maker |
| 4GBU02LS 4GBU02LSF 4GBU04LS 4GBU04LSF 4GBU06LS 4GB |
200V Low Surge Bridge in a GBU package
400V Low Surge Bridge in a GBU package
600V Low Surge Bridge in a GBU package
|
International Rectifier
|
| GBU6J GBU6J-BP GBU6A-BP GBU6D-BP GBU6M-BP GBU6B-BP |
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 6A 600V GBU 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 6A 800V GBU 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| IR15XB.. IR15XB08 IR15XB02 IR15XB04 IR15XB06 |
DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
15.0 Amps Single Phase Full Wave Bridge Rectifier
800V Bridge in a IR15XB package
200V Bridge in a IR15XB package
400V Bridge in a IR15XB package
600V Bridge in a IR15XB package
|
Vishay Semiconductors
International Rectifier
|
| 4GBL01 4GBL02 4GBL04 4GBL06 4GBL08 |
100V Bridge in a GBL package
200V Bridge in a GBL package
400V Bridge in a GBL package
600V Bridge in a GBL package
800V Bridge in a GBL package
|
International Rectifier
|
| GBU10J |
Bridge rectifier Pack: GBU
|
GULF SEMI
|
| GBU8K-E3 |
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE LEAD FREE, PLASTIC, CASE GBU, 4 PIN
|
Vishay Beyschlag
|
| MGFC38V6472 |
RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| HD06 HD04 HD01 HD02 |
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:40A; Voltage
TRIAC,200V V(DRM),25A I(T)RMS,TO-220
TRIAC-600VRM-25A-TO220
|
DIODES[Diodes Incorporated]
Diodes Inc.
|
| IRHE7230 IRHE8230 IRHE3230 IRHE4230 JANSF2N7262U J |
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 200000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 20000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| AM29DL161DB120EI AM29DL161DB70EI AM29DL161DB90EI A |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A 2N6845 with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A IRFE220 with Standard Packaging
x8/x16 Flash EEPROM
55V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A IRF5M3205 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY130CM with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9220 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5Y5305CM with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9230 with Standard Packaging x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| IRFL210 IRFL210TR |
200V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
|
International Rectifier
|
