| PART |
Description |
Maker |
| 10JDA60 |
DIODE - 1A 600V TJ = 150C 1 A, 600 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| 30PDA20 |
DIODE - 3A 200V TJ = 150C
|
Nihon Inter Electronics...
NIEC[Nihon Inter Electronics Corporation]
|
| 10EDB40 |
DIODE - 1A 400V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| 8ETX06 8ETX06-1 8ETX06FP 8ETX06S |
600V 8A HyperFast Discrete Diode in a D2-Pak package
600V 8A HyperFast Discrete Diode in a TO-220 FullPack package
600V 8A HyperFast Discrete Diode in a TO-262 package
Hyperfast Rectifier
|
IRF[International Rectifier]
|
| 15ETL06FPPBF 15ETH06FPPBF F06FPPBF |
Diode Switching 600V 15A 2-Pin(2 Tab) TO-220 Full-Pak Tube
Diode Switching 600V 10A 2-Pin(2 Tab) TO-220AC
|
Vishay Semiconductors
|
| 15ETL06S 15ETL06 15ETL06-1 15ETL06FP |
Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC
600V 15A Hyperfast Discrete Diode in a D2Pak package
600V 15A Hyperfast Discrete Diode in a TO-220 FullPak package
600V 15A Hyperfast Discrete Diode in a TO-262 package
600V 15A Hyperfast Discrete Diode in a TO-220AC package
Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC 超低VF Hyperfast整流器不连续模式PFC
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| RURU10060 FN3546 |
100A/ 600V Ultrafast Diode
100A, 600V Ultrafast Diode
100A 600V Ultrafast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N6 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|
| IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
