| PART |
Description |
Maker |
| 2SK3822 |
General-Purpose Switching Device Applications
High Output MOSFETs
|
Sanyo Semicon Device
|
| 2SK3703 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SJ652 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3817 |
High Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH3324 |
Medium Output MOSFETs
GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
|
Sanyo Semicon Device
|
| FSS80204 ENN8044 FSS802 |
Medium Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SJ657 |
High Output MOSFETs
|
SANYO
|
| 2SK2617LS |
High Output MOSFETs
|
SANYO
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| ASM2P2304NZF-08-TR |
Four Output PCI-X and General Purpose Buffer 2304 SERIES, LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8
|
Alliance Semiconductor, Corp.
|
