| PART |
Description |
Maker |
| 2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
Unknow
|
| TC55VEM316AXBN55 TC55VEM316AXBN TC55VEM316AXBN40 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC7SET86F02 TC7SET86F TC7SET86FU |
TENTATIVE (UNDER DEVELOPMENT) TOSHIBA CMOS DIGITAL INTERATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| TH58100FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA493 2SA493-GR 2SA493-Y |
PNP transistor for low noise audio amplifier applications
From old datasheet system
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
TOSHIBA
ETC[ETC]
List of Unclassifed Manufacturers
|
| STK621-017 |
TENTATIVE
|
Sanyo Semicon Device
|
| STK621-018 |
TENTATIVE
|
Sanyo Semicon Device
|
| STK621-031 |
CONNECTOR ACCESSORY
TENTATIVE
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| G121X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
|
| 2SC5363TENTATIVE |
2SC5363(Tentative) - NPN Transistor
|
Matsshita / Panasonic
|
| 2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET
Power F-MOS FETs
|
Matsshita / Panasonic
|
