| PART |
Description |
Maker |
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| MJH11017-D MJH11018 MJH11019 |
Complementary Darlington Silicon Power Transistors
Power 15A 150V PNP
Power 20A 150V Darlington NPN
Power 20A 200V Darlington PNP
|
ON Semiconductor
|
| ET191 |
TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管
From old datasheet system
SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 2SD833 |
HIGH POWER DARLINGTON
|
FUJI[Fuji Electric]
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| BU911 |
HIGH VOLTAGE POWER DARLINGTON
|
Comset Semiconductor
|
| 2N7371 |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| BU806 BU807 BU807TU |
NPN Epitaxial Silicon Darlington Transistor
High Voltage & Fast Switching Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
