| PART |
Description |
Maker |
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| 2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon PNP Transistor
Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
| 2SB1371 |
Silicon PNP triple diffusion planar type(For high power amplification) 6 A, 120 V, PNP, Si, POWER TRANSISTOR
|
TE Connectivity, Ltd.
PANASONIC[Panasonic Semiconductor]
|
| 2SA0886 2SA886 |
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic Corporation
Panasonic, Corp.
|
| MJL3281A MJL1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistor
Power 15A 200V PNP
|
ON Semiconductor
|
| MJE2955T MJE2955TG MJE3055TG MJE3055T |
Bipolar Power TO220 PNP 10A 60V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Complementary Silicon Plastic Power Transistors
|
ON Semiconductor
|
| MJE5731A MJE5731 MJE5730 ON2039 |
POWER TRANSISTORS PNP SILICON 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1.0 AMPERE POWER TRANSISTORS
From old datasheet system
|
ON Semiconductor
|
| 2SA1396 2SA1396-AZ 2SA1396M 2SA1396-K-AZ |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | SOT-186 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 10A条一（c）|的SOT - 186
10 A, 100 V, PNP, Si, POWER TRANSISTOR
PNP SILICON POWER TRANSISTOR
|
NEC, Corp.
|
| KSA614YTSTU KSA614 KSA614Y KSA614YTU KSA614O KSA61 |
Low Frequency Power Amplifier
PNP Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 3 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| SFT503/GR SFT501/G SFT501/GR |
5 AMP 200 VOLTS PNP HIGH SPEED POWER TRANSISTOR 5 A, 150 V, PNP, Si, POWER TRANSISTOR
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
