| PART |
Description |
Maker |
| 2SC3651 |
High-hFE/ Low-Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SC36511 2SC3651 |
High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SA1434 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3068 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| CSA733Q |
0.250W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 135 - 270 hFE. Complementary CSC945Q
|
Continental Device India Limited
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
