| PART |
Description |
Maker |
| 2SC2435 |
Silicon Ring Emitter Darlington Transistors
|
Fujitsu
|
| DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon)
From old datasheet system
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor
Siemens Semiconductor Group
|
| BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2N5229 2N5230 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
|
New Jersey Semiconductor
|
| 2PB1219 2PB1219AS 2PB1219A 2PB1219AQ 2PB1219AR 2PB |
PNP general purpose transistor
TRANS GP BJT PNP 50V 0.5A 3SOT323 T/R
|
PHILIPS[Philips Semiconductors]
Philips Semiconductors / NXP Semiconductors
|
| DP500 |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| TIP147T TIP145T TIP146T TIP147TTU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP145T |
PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorPNP硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
| 2SB850 |
Trans GP BJT PNP 50V 4A
|
New Jersey Semiconductor
|
| 2N3638A |
Trans GP BJT PNP 25V
|
New Jersey Semiconductor
|
