| PART |
Description |
Maker |
| 1SS357 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS384 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS383 |
DIODE LOW VOLTAGE HIGH SPEED SWITCHING
|
TOSHIBA[Toshiba Semiconductor]
|
| BUP200D Q67040-A4420-A2 BUP200-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流闭锁免费
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HN2S01FU E001995 |
From old datasheet system
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| KDR377E |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| HRB0103A |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
|
HITACHI[Hitachi Semiconductor]
|
| 1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| KTX402U |
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| BAP63-02 |
High speed switching for RF signals Low diode capacitance Low diode forward resistance
|
TY Semiconductor Co., Ltd
|
