| PART |
Description |
Maker |
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| CAT25C32 25C64 CAT25C64U14-1.8TE13 CAT25C64U14-TE1 |
32K/64K-BitSPISerialCMOSE2PROM
32K/64K-Bit SPI Serial CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
CATALYST[Catalyst Semiconductor]
|
| MX27L512PC-15 MX27L512TI-20 MX27L512TI-12 MX27L512 |
512K-BIT [64K x 8] CMOS EPROM 64K X 8 OTPROM, 120 ns, PDIP28
|
Macronix International Co., Ltd.
|
| KM64258C |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT7198L IDT7198L20DB IDT7198L20EB IDT7198L20LB ID |
CMOS static RAM 64K (16K x 4-bit)
CMOS STATIC RAMs 64K (16K x 4-BIT) Added Chip Select and Output Controls
|
IDT[Integrated Device Technology]
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| 24WC32 CAT24WC32 CAT24WC64 |
32K/64K-Bit I2C Serial CMOS E2PROM
32K/64K-BitI2CSerialCMOSE2PROM
|
CatalystSemiconductor
Catalyst Semiconductor
|
| CAT28C64A CAT28C64AI-20 28C64A-20 CAT28C64A-15 CAT |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128Kx8 EEPROM
64K - BIT CMOS E2PROM
|
Atmel, Corp.
CATALYST[Catalyst Semiconductor]
|
| AT27BV1024-12JC AT27BV1024-90VI AT27BV1024 AT27BV1 |
1 Megabit 64K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM 64K X 16 OTPROM, 90 ns, PDSO40
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| KM41464A KM41464A-12 KM41464A-15 KM41464AJ KM41464 |
64K x 4-Bit DRAM
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE 64K的4位动态内存页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS7C31026B AS7C31026B-10JCN AS7C31026B-10JI AS7C31 |
SRAM - 3.3V Fast Asynchronous
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-SOIC -40 to 85
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-SSOP -40 to 85
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-TSSOP -40 to 85
3.3 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
Hex D-Type Flip-Flops With Clear 16-SSOP -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PDSO44
8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
3.3 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Hex D-Type Flip-Flops With Clear 16-SOIC -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PDSO44
3.3 V 64K X 16 CMOS SRAM
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
