| PART |
Description |
Maker |
| SIDC07D60F6 SIDC07D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 10DF 10DF6 10DF2 10DF4 10DF8 10DF8TR 10DF1 |
Ultra Fast Switching Rectifier(超快开关整流器)
ULTRAFAST SWITCHING RECTIFIER
200V 1A Ultra-Fast Discrete Diode in a DO-204AL package
400V 1A Ultra-Fast Discrete Diode in a DO-204AL package
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package
|
IRF[International Rectifier]
|
| BAS20-7-F BAS21-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| 1N4148WT-7-F |
surface mount fast switching diode 0.125 A, 80 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| 70HFL10S02 70HFL100S10 70HFL100S05 40HFL100S10 40H |
40A Fast Recovery Rectifier Diode(40A 快速恢复整流二极管)
Fast Recovery Rectifiers
1000V Fast Recovery Diode in a DO-203AB (DO-5) package
100V Fast Recovery Diode in a DO-203AB (DO-5) package
200V Fast Recovery Diode in a DO-203AB (DO-5) package
400V Fast Recovery Diode in a DO-203AB (DO-5) package
800V Fast Recovery Diode in a DO-203AB (DO-5) package
600V Fast Recovery Diode in a DO-203AB (DO-5) package
|
IRF[International Rectifier]
|
| 1N4448W-7-F |
FAST SWITCHING SURFACE MOUNT DIODE 0.25 A, 75 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| MMBD4448HCDW-7-F MMBD4448HSDW-7-F |
SURFACE MOUNT FAST SWITCHING DIODE ARRAY 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| R9G20212CS R9G20412CS R9G20612CS R9G20812CS R9G210 |
200V, 1200A fast recovery single diode
400V, 1200A fast recovery single diode
600V, 1200A fast recovery single diode
800V, 1200A fast recovery single diode
1000V, 1200A fast recovery single diode
1200V, 1200A fast recovery single diode
1400V, 1200A fast recovery single diode
1600V, 1200A fast recovery single diode
|
Powerex Power Semiconductors
|
| Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
