| PART |
Description |
Maker |
| BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16
LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting
Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto...
Honeywell International, Inc.
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| UT62W1024LC-35L UT62W1024LC-35LL UT62W1024LC-55L U |
Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 55 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM
|
UTRON Technology
|
| CY7C1350G-250BGI CY7C1350G CY7C1350G-100AXC CY7C13 |
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture
Mechanism, 2-inch wide, compact, Easy Load and platen detect
Mechanism, 2-inch wide, Hi-speed, compact Easy Load
Parallel Mini Interface Board with cutter controller for 6x8MCL35x
Mechanism, ELM w/low profile cutter (full or partial cut)
Mechanism, 2-inch wide, Hi-speed, compact, rear feed and platen detect 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
Mechanism, 2-inch wide, compact Easy Load, 3V logic 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 128K X 36 ZBT SRAM, 4 ns, PBGA119
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| V62C2161024LL-55T V62C2161024LL-85T V62C2161024L V |
64K X 16 STANDARD SRAM, 100 ns, PDSO44
Ultra Low Power 64K x 16 CMOS SRAM 超低功4K的16 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic Corp
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM |
Memory>Low Power SRAM
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
|
HITACHI[Hitachi Semiconductor]
Renesas Electronics Corporation
|
| V62C1801024LL-85B V62C1801024LL-85T V62C1801024LL- |
LCD Displays 15.0 inch (38.0 cm) LVDS
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
| HY62CT0808 HY62CT08081E HY62CT08081E-C HY62CT08081 |
22281120 32Kx8bit CMOS SRAM
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
COUNTER, DIGITAL, 6DIGIT, TRANS; Temp, op. max:55(degree C); Temp, op. min:-10(degree C)
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| KS57P21832 |
CMOS technology provides for low power consumption and a wide operating voltage range.
|
Samsung semiconductor
|
| N343532L-K N343532L-N |
CMOS Low Voltage SRAM
|
NKK Micro Devices
|
| HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY6 |
HY62WT08081E Series 32Kx8bit CMOS SRAM HY62WT08081E系列32Kx8bit CMOS SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
(IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
