| PART |
Description |
Maker |
| SDR952_61 SDR951_61 SDR950 SDR950_61 SDR952-61 SDR |
60 AMP 100-200 Volts 35nsec Hyper Fast Rectifier
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
| SDR620-28 SDR621-28 |
20 AMP 100-200 Volts 35nsec Hyper Fast Rectifier
|
Solid States Devices, Inc.
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| HM628512BI HM628512BLFPI-7 HM628512BLFPI-8 HM62851 |
4 M SRAM (512-kword x 8-bit)
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Octal Buffers And Line Drivers With 3-State Outputs 20-CDIP -55 to 125
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 47.0 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V;
|
http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STD25NF20 |
N-channel 200 V, 0.10 Ohm typ., 18 A StripFET(TM) Power MOSFET in DPAK package
|
ST Microelectronics
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
| 2SB736 |
Micro package. Complementary to 2SD780. High DC Current Gain: hFE = 200 TYP.
|
TY Semiconductor Co., Ltd
|
| STW75NF20 |
N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-247 package
|
ST Microelectronics
|
| MURP20040CT MURP20020CT MURP20020CT_06 MURP20020CT |
100 A, 300 V, SILICON, RECTIFIER DIODE
ULTRAFAST RECTIFIERS 200 AMPERES, 200−400 VOLTS
|
ONSEMI[ON Semiconductor]
|
