| PART |
Description |
Maker |
| NE4210M01 NE4210M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC[NEC]
|
| NE3514S02 |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
CEL
|
| NE425S01_98 NE425S01 NE425S01-T1 NE425S01-T1B NE42 |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC[NEC]
|
| NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D-A |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| NE32400 NE24200 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC[NEC]
|
| NE3517S03-T1C NE3517S03-T1D |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
Renesas Electronics Corporation
|
| SBFP420M |
UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
|
SANYO[Sanyo Semicon Device]
|
| ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-B |
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
AGILENT TECHNOLOGIES INC
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五（巴西）直| 15mA的我（直）|芯片
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp.
NEC[NEC]
|
| EL2126CS EL2126CS-T7 EL2126CSZ EL2126 EL2126CW-T7A |
Ultra-Low Noise, Low Power, Wideband Amplifier OP-AMP, 2000 uV OFFSET-MAX, 80 MHz BAND WIDTH, PDSO8
Ultra-Low Noise, Low Power, Wideband Amplifier OP-AMP, 3000 uV OFFSET-MAX, 80 MHz BAND WIDTH, PDSO5
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| 2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
http://
NEC[NEC]
NEC Corp.
|
