| PART |
Description |
Maker |
| CY7C4285V CY7C4275V CY7C4255V CY7C4265V |
32K/64Kx18 Low Voltage Deep Sync FIFOs
|
CYPRESS[Cypress Semiconductor]
|
| CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns
64K x 9 low voltage Deep Sync FIFO, 25ns
64K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 25ns
32K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 15ns
32K x 9 low voltage Deep Sync FIFO, 25ns
From old datasheet system
16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
| 7C4282V_92V-15 7C4282V_92V-25 CY7C4282V CY7C4282V- |
64K/128Kx9 Low Voltage Deep Sync FIFOsw/ Retransmit & Depth Expansion
From old datasheet system
64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion
128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion(128Kx9低压深同步先进先出（FIFO
64Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion(64Kx9 深同步先进先出（FIFO中断发深度扩展)
128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion(128Kx9低压深同步先进先出（FIFO 128Kx9低电压后同步FIFO的瓦重发
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
|
| CY7C4261-25AC |
16K/32K x 9 Deep Sync FIFOs
|
Cypress
|
| IC62LV256 IC62LV256-70UI IC62LV256-100J IC62LV256- |
45ns; 3.3V; 32K x 8 low voltage static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
32K x 8 Low Power SRAM with 3.3V 32K的8低功耗SRAM.3V
|
ICSI[Integrated Circuit Solution Inc]
Hitachi,Ltd.
Cypress Semiconductor, Corp.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| IS61LV3216-20K IS61LV3216-20T IS61LV3216-20TI IS61 |
32K X 16 LOW VOLTAGE CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| AT27LV256A-55JI AT27LV256A-55JU AT27LV256A-55RI AT |
256K (32K x 8) Low-voltage OTP EPROM
|
ATMEL Corporation
|
| 80C38X2 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V low power high speed 30/33 MHz
|
Philips
|
| WS62256LLP WS62256LLFP |
Very Low Power / Voltage CMOS SRAM 32K X 8bit
|
Wing Shing Computer Com...
WINGS[Wing Shing Computer Components]
|
| 27LV256_04 27C256-20_L 27C256-20_P 27C256-20_SO 27 |
256K (32K x 8) Low-Voltage CMOS EPROM
|
MICROCHIP[Microchip Technology]
|
