| PART |
Description |
Maker |
| BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| BBY52-05W |
Silicon High Q Hyperabrupt Tuning Diode
|
Infineon
|
| BBY52-02W |
Varactordiodes - Silicon high Q hyperband tuning diode
|
Infineon
|
| MA4ST1103-1141T MA4ST1103 |
High Tuning Ratio Silicon Hyperabrupt Varactor Diode
|
MACOM[Tyco Electronics]
|
| KDV1430 KDV1430A KDV1430B KDV1430C KDV1430D |
Silicon diode for FM radio band tuning applications VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC) KEC(Korea Electronics)
|
| MMVL3102T1 MMVL3102T1_06 MMVL3102T1G MMVL3102T106 |
Silicon Tuning Diode VHF BAND, 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
|
ONSEMI[ON Semiconductor]
|
| BBY5907 BBY59-02V |
27.8 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SC-79, 2 PIN Silicon Tuning Diode
|
EUPEC GMBH ?CO KG Infineon Technologies AG Infineon Technologies A...
|
| MMVL409T1G |
Silicon Tuning Diode VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ON Semiconductor
|
| KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
| KDV214 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|