| PART |
Description |
Maker |
| 2SA1608 |
PNP Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SA1411 |
Silicon PNP Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SD1005 |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SC3736 |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| HN1D01FU-14 |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| HN1D01FE-14 |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| JDV2S19S |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| JDP2S01AFS |
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS272TE85R |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| CBS05F30 |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| 1SV273 |
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| JDV2S10S |
From old datasheet system TOSHIBA DIODE Silicon Epitaxial Planar Type
|
TOSHIBA[Toshiba Semiconductor]
|