| PART |
Description |
Maker |
| 1N4392 1N4404 1N4411 1N4421 1N4402 1N4405 1N4403 1 |
DIODE SWITCHING DIODE 0.5A 2DO-17
Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R
Diode Zener Single 68V 5% 1.5W 2-Pin DO-41
Diode Rectifier Bridge Single 200V 10A
|
New Jersey Semiconductor
|
| MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
| MMBD7000LT1 ON2085 |
Dual Switching Diode
DUAI SWITCHING DIODE
From old datasheet system
|
MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1N6642 1N4305 1N4149 1N4449 1N4444 1N4447 1N6638 1 |
COMPUTER DIODE Switching
COMPUTER SWITCHING DIODE
200mA Low Power Switching
|
MICROSEMI CORP-LOWELL
MICROSEMI[Microsemi Corporation]
|
| CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
| IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| CMEDA-6I |
SMD Switching Diode QUAD: MONOLITHIC
SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY
|
CENTRAL[Central Semiconductor Corp]
|
| Q67040S4714 IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| BAS16 Q62702-F739 |
Silicon Switching Diode (For high-speed switching) 0.25 A, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
